The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.

介绍了一种用于抗闭锁的辐射敏感开关。

An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.

从体硅CMOS器件的闭锁效应入手,提出了抑制闭锁的一种新方法—伪闭锁路径法。